DocumentCode :
413924
Title :
Modelling long-term module performance based on realistic reporting conditions with consideration to spectral effects
Author :
Williams, S.R. ; Betts, T.R. ; Helf, T. ; Gottschalg, R. ; Beyer, Hans Georg ; Infield, D.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Loughborough Univ., UK
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1908
Abstract :
A model for the annual performance of different module technologies is presented that includes spectral effects. The model is based on the realistic reporting conditions but also allows for secondary spectral effects, as experienced by multi-junction devices. The model is validated against measurements taken at CREST and shows a good agreement for all devices. Combining this relatively simple model with ASPIRE, a spectral irradiance model based on standard meteorological measurements, allows the translation to other locations. The method is applied to measurements of different devices deployed in Loughborough University and the significance of certain effects is discussed.
Keywords :
II-VI semiconductors; amorphous semiconductors; cadmium compounds; elemental semiconductors; semiconductor device models; silicon; solar cells; CdTe; Si-Si; long-term module performance modelling; module technology; multijunction devices; realistic reporting conditions; secondary spectral effects; solar cells; spectral irradiance model; standard meteorological measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306312
Link To Document :
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