Title :
Device characterizations and physical models of strained-Si channel CMOS
Author :
Maeda, T. ; Numata, T. ; Mizuno, T. ; Usuda, K. ; Tanabe, A. ; Tezuka, T. ; Nakaharai, S. ; Koga, J. ; Irisawa, T. ; Moriyama, Y. ; Hirashita, N. ; Sugiyama, N. ; Takagi, S.
Abstract :
Recent progress on the development of strained-Si CMOS is reviewed with emphasis on the electrical properties. The device parameters extracted from strained-Si CMOS and the physical models, indispensable in describing the electrical characteristics, are presented. In addition, new requirements for device characterization, specific to strained-Si devices, which include Vth control and influence of Ge, are also addressed.
Keywords :
MOSFET; conduction bands; diffusion; hole mobility; interface states; semiconductor device models; silicon-on-insulator; valence bands; MOS interface properties; Si; band offset; conduction bands; current drive; device characterizations; electrical properties; impurity profile; mobility enhancement; optimum device design; physical models; self heating effect; strained-Si channel CMOS; tensile strain; threshold voltage control; valence bands; Capacitive sensors; Germanium silicon alloys; MOSFETs; Microelectronics; Semiconductor device modeling; Silicon germanium; Substrates; Tensile strain; Testing; Thermal conductivity;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309466
