Device characterizations and physical models of strained-Si channel CMOS

Author

Maeda, T. ; Numata, T. ; Mizuno, T. ; Usuda, K. ; Tanabe, A. ; Tezuka, T. ; Nakaharai, S. ; Koga, J. ; Irisawa, T. ; Moriyama, Y. ; Hirashita, N. ; Sugiyama, N. ; Takagi, S.

fYear

2004

fDate

22-25 March 2004

Firstpage

133

Lastpage

138

Abstract

Recent progress on the development of strained-Si CMOS is reviewed with emphasis on the electrical properties. The device parameters extracted from strained-Si CMOS and the physical models, indispensable in describing the electrical characteristics, are presented. In addition, new requirements for device characterization, specific to strained-Si devices, which include V_th control and influence of Ge, are also addressed.

Keywords

MOSFET; conduction bands; diffusion; hole mobility; interface states; semiconductor device models; silicon-on-insulator; valence bands; MOS interface properties; Si; band offset; conduction bands; current drive; device characterizations; electrical properties; impurity profile; mobility enhancement; optimum device design; physical models; self heating effect; strained-Si channel CMOS; tensile strain; threshold voltage control; valence bands; Capacitive sensors; Germanium silicon alloys; MOSFETs; Microelectronics; Semiconductor device modeling; Silicon germanium; Substrates; Tensile strain; Testing; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309466

Filename

1309466