DocumentCode
414482
Title
Prospects of emerging new memory technologies
Author
Lee, S.Y. ; Kim, Kinam
Author_Institution
Adv. Technol. Dev., Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea
fYear
2004
fDate
2004
Firstpage
45
Lastpage
51
Abstract
New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric RAM, Phase change RAM, and Magnetic RAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.
Keywords
ferroelectric storage; magnetoresistive devices; random-access storage; technological forecasting; tunnelling magnetoresistance; commercialization; emerging new memory technologies; ferroelectric RAM; magnetic RAM; magnetic tunnel junction; nonvolatile memories; phase change RAM; scaled cell transistors; technical challenges; technological barriers; Dielectrics; Electrodes; Ferroelectric films; Ferroelectric materials; MIM capacitors; Material storage; Nonvolatile memory; Phase change random access memory; Plugs; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN
0-7803-8528-4
Type
conf
DOI
10.1109/ICICDT.2004.1309904
Filename
1309904
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