Title :
Build-in reliability analysis for circuit design in the nanometer technology era
Author :
Liu, Zhihong ; Zhang, Weiquan ; Mu, Fuchen
Author_Institution :
Cadence Design Syst. Inc., San Jose, CA, USA
Abstract :
In this paper, the methodology of the reliability modeling and simulation for the state-of-the-art technology is presented. The extraction for HCI (Hot Carrier Injection) and NBTI (Negative Bias Temperature Instability) for both lifetime and aged model parameter method is discussed. The integration of these models into the transistor level and gate level simulation flow can be used by the designers to satisfy the reliability requirements.
Keywords :
SPICE; hot carriers; integrated circuit design; integrated circuit modelling; integrated circuit reliability; nanoelectronics; SPICE; aged model parameter method; build-in reliability analysis; circuit design; device degradation; gate level simulation flow; hot carrier injection; lifetime model; nanometer technology; negative bias temperature instability; reliability modeling; reliability simulations; transistor level simulation flow; Aging; Circuit analysis; Circuit simulation; Circuit synthesis; Hot carrier injection; Human computer interaction; Integrated circuit reliability; Negative bias temperature instability; Niobium compounds; Titanium compounds;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309946
