Title :
Integration challenges of new materials and device architectures for IC applications
Author :
Nguyen, Bich-yen ; Thean, Aaron ; White, Ted ; Vandooren, Anne ; Sadaka, Marim ; Mathew, Leo ; Barr, Alexander ; Thomas, Shawn ; Zalava, Melissa ; Zhang, Da ; Eades, Debby ; Shi, Zhong-Hai ; Schaeffer, Jamie ; Triyoso, Dina ; Samavedam, Sri ; Vartanian, V
Author_Institution :
Freescale Semicond., Technol. Solutions Organ., Austin, TX, USA
Abstract :
In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; capacitance; dielectric thin films; leakage currents; low-power electronics; nanoelectronics; silicon-on-insulator; work function; CMOS devices; FDSOI; FinFET; capacitance equivalent thickness; gate leakage; high performance CMOS; high permittivity dielectric; low power CMOS; metal gate electrodes; new materials; threshold voltage; work function; Application specific integrated circuits; CMOS technology; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Thickness control;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309953
