Development of a spectroscopically resolved photoluminescence microscopy technique for studying strain and defects in high power laser diodes

This paper is proposed on the development of a spectroscopically resolved photoluminescence microscopy (S-PLM) system which allows 2D strain profiles to be produced. Coupled with ageing studies, this technique allows the nondestructive monitoring of defect and strain field evolution, providing insight into device degradation processes. Site specific investigations are made by using the PLM imaging system to position the excitation spot. It is concluded that the S-PLM technique allows us to determine the peak PL wavelength and intensity of any point on the surface studied. Other applications include spectroscopic measurement of near- and far-field patterns and virtual sources of laser diodes.