DocumentCode :
414783
Title :
The ways of threshold current reduction in mid-IR QW lasers
Author :
Mashoshina, O.V. ; Sukhoivanov, L.A. ; Lysak, V.V. ; Rouillard, Y. ; Joullie, A.
Author_Institution :
Kharkov Nat. Univ. of Radioelectron., Ukraine
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
188
Abstract :
This paper presents a theoretical model for reducing threshold current of mid-IR lasers, and finding methods for lasers optimization. Two structures In0,35Ga0,65As0,15Sb0,85/GaSb and In0,35Ga0,65As0,15Sb0,85/Al0,35Ga0, 65As0,03Sb0,97 were taken for investigation. The main feature of the model lies in the fact that the optimization problem can be set out in the form of easy and concrete expressions and indicates the ways of optimization of semiconductor mid-infrared laser diodes and the possibility of their fabrication for performance with stable generation above room temperatures.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; optimisation; quantum well lasers; laser fabrication; laser optimization; semiconductor mid-infrared laser diode; threshold current reduction; Charge carrier processes; Gas lasers; Laser modes; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Surface emitting lasers; Temperature dependence; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312249
Filename :
1312249
Link To Document :
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