Ultrafast resonant nonlinear response of AlGaAs photonic crystals

Author

Bristow, A.D. ; Wells, J.-P.R. ; Fox, A.M. ; Skolnick, M.S. ; Tahraoui, A. ; Krauss, T.F.

Author_Institution

Dept. of Phys. & Astron., Univ. of Sheffield, UK

fYear

2003

fDate

22-27 June 2003

Firstpage

205

Abstract

This study reports experimental measurements of the ultrafast nonlinear response of AlGaAs photonic crystals with a band gap at around 900 nm. An ultrafast nonlinear shift of the band gap wavelength was observed when using femtosecond pulsed excitation at 800 nm. The magnitude of the shift is very large (> 6 nm), and the 1/e response time is around 30 ps. These results confirm the excellent potential of semiconductor photonic crystals for applications in nonlinear optical devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; nonlinear optics; photonic band gap; photonic crystals; 30 ps; 800 nm; 900 nm; AlGaAs; AlGaAs photonic crystals; band gap; femtosecond pulsed excitation; nonlinear optical devices; resonant nonlinear response; semiconductor photonic crystals; ultrafast nonlinear shift; ultrafast response; Delay effects; Extraterrestrial measurements; Indium gallium arsenide; Optical waveguides; Photonic band gap; Photonic crystals; Physics; Resonance; Ultrafast optics; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 2003. EQEC '03. European

Print_ISBN

0-7803-7733-8

Type

conf

DOI

10.1109/EQEC.2003.1314062

Filename

1314062