Title :
Recent developments in SiC power devices and related technology
Author :
Millán, José ; Godignon, Philippe ; Tournier, Dominique
Author_Institution :
Centro Nacional de Microelectron., CSIC, Barcelona, Spain
Abstract :
This paper is an overview of recent progress in the development of high-voltage SiC power devices. Main issues on materials and SiC related process technology are also discussed. A detailed review of current situation and trends in SiC power rectifiers and switches is also given. Finally, an application of the SiC JFETs as a current limiter device is reported, showing the viability of SiC devices in certain applications.
Keywords :
junction gate field effect transistors; power semiconductor diodes; power semiconductor switches; silicon compounds; solid-state rectifiers; wide band gap semiconductors; JFETs; SiC; SiC power devices; power rectifiers; power switches; process technology; Chemical vapor deposition; Crystalline materials; Fabrication; JFETs; Rectifiers; Schottky diodes; Silicon carbide; Substrates; Switches; Temperature;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314551
