DocumentCode
415522
Title
Power capabilities of RF MEMS
Author
Ducarouge, B. ; Dubuc, D. ; Flourens, F. ; Melle, S. ; Ongareau, E. ; Grenier, K. ; Boukabache, A. ; Conedera, V. ; Pons, P. ; Perret, E. ; Aubert, H. ; Plana, R.
Author_Institution
LAAS, CNRS, Toulouse, France
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
65
Abstract
This paper outlines the power capabilities of RF MEMS devices. It is shown the specific needs concerning the technology, the design and the geometry of the devices in order to circumvent self-actuation, AC electromigration, thermal effect and reliability.
Keywords
current density; electromigration; micromechanical devices; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; AC electromigration; RF MEMS; design; geometry; power capabilities; reliability; self-actuation; technology; thermal effect; Bridge circuits; Electromigration; Equations; Integrated circuit technology; Mechanical factors; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314559
Filename
1314559
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