Title :
Platinum implantation versus platinum silicide for the local lifetime control of power P-i-N diode
Author :
Vobecký, J. ; Hazdra, P.
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
Abstract :
Low-temperature diffusion (700 - 725°C) of platinum from platinum silicide and implanted layer of platinum (1 MeV) at the anode side of power P-i-N silicon diode were used for local lifetime control. PtSi allows Much higher maximal reduction of excess carrier lifetime than that of implanted platinum (due to the defects from platinum implantation), but still much lower than the standard helium irradiation.
Keywords :
carrier lifetime; diffusion; ion implantation; p-i-n diodes; platinum; platinum compounds; power semiconductor diodes; semiconductor device reliability; 1 MeV; 700 to 725 degC; Pt implantation; PtSi2; PtSi2-Si; Si:Pt; excess carrier lifetime; higher maximal reduction; local lifetime control; low-temperature diffusion; power P-i-N diode; Alpha particles; Annealing; Anodes; Helium; Ion beams; P-i-n diodes; Platinum; Silicides; Silicon; Sputtering;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314570
