Title :
Direct measurement of self-heating effects at the drift region of 600V PT-IGBTs
Author :
Perpiña, X. ; Jordà, X. ; Godignon, P. ; Millàn, J. ; von Kiedrowski, H. ; Vobecký, J. ; Mestres, N.
Author_Institution :
Power Devices & Syst. Group, CNM-CSIC, Bellaterra, Spain
Abstract :
The time evolution of the temperature gradient at the drift region (N--epitaxy) of two 600V PT-IGBT structures, corresponding to unirradiated and irradiated devices, is measured. These measurements have been performed by the internal IR-laser deflection technique (IIR-LD). The heat diffusion time and steady-state temperature gradient are deduced from the measured data.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; temperature distribution; 600 V; drift region; heat diffusion time; power semiconductor devices; self-heating effects; steady-state temperature gradient; temperature gradient; time evolution; Absorption; Doping; Insulated gate bipolar transistors; Laser beams; Plasma temperature; Probes; Temperature sensors; Thermal management of electronics; Thermal stresses; Time measurement;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314576
