Title :
Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs
Author :
Siemieniec, Ralf ; Herzer, Reinhard ; Netzel, Mario ; Lutz, Josef
Author_Institution :
Dept. of Solid-State Electron., Technische Hochschule Ilmenau, Germany
Abstract :
Device simulation, based on an extended recombination model and previously determined recombination center parameters, serves as design tool for carrier-lifetime controlled, state-of-the-art 1.2kV NPT IGBTs. Homogenous and local recombination center profiles are considered. The sensitivity of important device characteristics to the type of the recombination center profile is investigated in simulation and experiment. A possible application, the improvement of reverse leakage properties of reverse blocking capable NPT IGBTs, is discussed.
Keywords :
carrier lifetime; electron-hole recombination; insulated gate bipolar transistors; leakage currents; power semiconductor devices; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 1.2 kV; 1.2kV NPT IGBTs; carrier lifetime control; carrier-lifetime controlled NPT IGBTs; design tool; device simulation; extended recombination model; homogenous recombination center profiles; irradiation; local recombination center profiles; recombination center parameters; reverse blocking; reverse leakage properties; Charge carrier lifetime; Electron traps; Insulated gate bipolar transistors; Leakage current; Manufacturing; Poisson equations; Radiative recombination; Silicon; Solid modeling; Spontaneous emission;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314582
