• DocumentCode
    415533
  • Title

    MnO/TeO2 thin film gamma radiation sensors

  • Author

    Arshak, K. ; Korostynska, O. ; Henry, J.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    177
  • Abstract
    In this work, the use of mixed oxide materials, such as Manganese oxide (MnO) and Tellurium dioxide (TeO2) in the form of thermally evaporated thin film structures, is explored for gamma radiation dosimetry application. All samples showed an increase in the values of current with the increase in the radiation dose up to certain dose levels.
  • Keywords
    dosimetry; gamma-ray detection; manganese compounds; semiconductor counters; semiconductor thin films; tellurium compounds; MnO-TeO2; MnO/TeO2 thin film gamma radiation sensors; dosimetry application; mixed oxide materials; thermally evaporated thin film structures; Contacts; Dosimetry; Electrodes; Gamma ray detectors; Gamma rays; Manufacturing; Paramagnetic materials; Tellurium; Thin film sensors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314587
  • Filename
    1314587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415533