DocumentCode :
415533
Title :
MnO/TeO2 thin film gamma radiation sensors
Author :
Arshak, K. ; Korostynska, O. ; Henry, J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
Volume :
1
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
177
Abstract :
In this work, the use of mixed oxide materials, such as Manganese oxide (MnO) and Tellurium dioxide (TeO2) in the form of thermally evaporated thin film structures, is explored for gamma radiation dosimetry application. All samples showed an increase in the values of current with the increase in the radiation dose up to certain dose levels.
Keywords :
dosimetry; gamma-ray detection; manganese compounds; semiconductor counters; semiconductor thin films; tellurium compounds; MnO-TeO2; MnO/TeO2 thin film gamma radiation sensors; dosimetry application; mixed oxide materials; thermally evaporated thin film structures; Contacts; Dosimetry; Electrodes; Gamma ray detectors; Gamma rays; Manufacturing; Paramagnetic materials; Tellurium; Thin film sensors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314587
Filename :
1314587
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=415533
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