DocumentCode :
415541
Title :
Alternative methods of parameters extraction based on the Pseudo-MOS technique
Author :
Ravariu, C. ; Rusu, A. ; Ravariu, F. ; Dobrescu, L. ; Dobrescu, D.
Author_Institution :
Dept. of Microelectron., Bucharest Univ., Romania
Volume :
1
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
249
Abstract :
The pseudo-MOS transistor is a dedicated device for in situ electrical characterization of the SOI wafers. In this paper were extracted some parameters for a 200nm Si-film manufactured in SIMOX technique. In this scope, experimental Curves ID-VG, ID-VD in inversion and accumulation were used, This work presents an alternative method for the threshold and fiat-band voltages extraction, using the Non-linear Electrical Conduction Theorem.
Keywords :
MOSFET; SIMOX; semiconductor device models; semiconductor device testing; silicon-on-insulator; 200 nm; Nonlinear Electrical Conduction Theorem; Pseudo-MOS technique; SIMOX technique; SOI wafers; electrical characterization; parameters extraction; pseudo-MOS transistor; Current measurement; Dielectric substrates; Doping; Extrapolation; MOSFETs; Microelectronics; Parameter extraction; Pulp manufacturing; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314608
Filename :
1314608
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=415541
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