Title :
A simple model for the nanoscale surrounding-gate MOSFET
Author :
Jiménez, D. ; Iñíguez, B. ; Sáenz, J.J. ; Sune, Jordi ; Marsal, L.F. ; Pallarès, J.
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
Abstract :
In this letter a compact model for the surrounding-gate (SGT) MOSFET is presented. The basis of the model is the transmission theory. The exact solution of the Poisson´s equation has been obtained to deal with all the operation regions.
Keywords :
MOSFET; Poisson equation; semiconductor device models; Poisson´s equation; compact model; nanoscale surrounding-gate MOSFET; transmission theory; Boundary conditions; CMOS technology; Cathodes; Electrodes; Electrons; MOSFET circuits; Poisson equations; Scalability; Semiconductor device modeling; Silicon;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314612
