DocumentCode
415542
Title
A simple model for the nanoscale surrounding-gate MOSFET
Author
Jiménez, D. ; Iñíguez, B. ; Sáenz, J.J. ; Sune, Jordi ; Marsal, L.F. ; Pallarès, J.
Author_Institution
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
265
Abstract
In this letter a compact model for the surrounding-gate (SGT) MOSFET is presented. The basis of the model is the transmission theory. The exact solution of the Poisson´s equation has been obtained to deal with all the operation regions.
Keywords
MOSFET; Poisson equation; semiconductor device models; Poisson´s equation; compact model; nanoscale surrounding-gate MOSFET; transmission theory; Boundary conditions; CMOS technology; Cathodes; Electrodes; Electrons; MOSFET circuits; Poisson equations; Scalability; Semiconductor device modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314612
Filename
1314612
Link To Document