On the current saturation in low dimensional MOSFETs

Submicron MOSFETs are the issue for ULSI integrated circuits. Several current models are proposed to explain the drain current behavior in the saturation region of the I_D-V_D characteristic curve. Mainly, we can distinguish two types: the classical and low dimension current modeling. In the present work a survey of Current voltage models is presented aiming a contribution to interpret the non-saturation phenomenon, which are severe in low dimensional devices.