Title :
Physical modeling of double-gate transistor
Author_Institution :
Dept. of Microelectron., Moscow Eng. Phys. Inst., Russia
Abstract :
A new compact physical model for nano-scale double-gate transistors has been proposed. Crossover between diffusion and ballistic regimes of carrier´s transport has been examined.
Keywords :
carrier mobility; electron density; semiconductor device models; transistors; ballistic regimes; carrier transport; compact physical model; diffusion regime; double-gate transistor; Analytical models; Channel bank filters; Electrons; Electrostatics; MOSFET circuits; Microelectronics; Numerical simulation; Poisson equations; Silicon; Threshold voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314623
