Title :
Nonvolatile dynamic memories
Author :
Dimitrijev, Sima
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
This paper demonstrates that electronically passivated Si-SiO2 interface enables the development of nonvolatile dynamic memories. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.
Keywords :
DRAM chips; MOS capacitors; MOSFET; elemental semiconductors; semiconductor storage; semiconductor-insulator boundaries; silicon; silicon compounds; DRAM cell; Si-SiO2; charge-retention times; electronically passivated Si-SiO2 interface; limited memory-capacity increase; nonvolatile dynamic memories; superior memory cells; Capacitance; Data processing; Electrons; MOS capacitors; MOSFET circuits; Nonvolatile memory; Random access memory; Read-write memory; Silicon carbide; Writing;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314647
