• DocumentCode
    415555
  • Title

    Nonvolatile dynamic memories

  • Author

    Dimitrijev, Sima

  • Author_Institution
    Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    385
  • Abstract
    This paper demonstrates that electronically passivated Si-SiO2 interface enables the development of nonvolatile dynamic memories. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC. The disadvantages of the DRAM cell (ICIT), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.
  • Keywords
    DRAM chips; MOS capacitors; MOSFET; elemental semiconductors; semiconductor storage; semiconductor-insulator boundaries; silicon; silicon compounds; DRAM cell; Si-SiO2; charge-retention times; electronically passivated Si-SiO2 interface; limited memory-capacity increase; nonvolatile dynamic memories; superior memory cells; Capacitance; Data processing; Electrons; MOS capacitors; MOSFET circuits; Nonvolatile memory; Random access memory; Read-write memory; Silicon carbide; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314647
  • Filename
    1314647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415555