Title :
Highly reliable 32Mb FRAM with advanced capacitor technology
Author :
Song, Y.J. ; Joo, H.J. ; Kang, S.K. ; Kim, H.H. ; Park, J.H. ; Kang, Y.M. ; Kang, E.Y. ; Lee, S.Y. ; Kinam Kim
Author_Institution :
Samsung Electron. Co. Ltd., South Korea
Abstract :
Highly reliable 32Mb FRAM was successfully developed by double annealing technique and CVD deposition technique. The optimized annealing method generates highly (111) oriented ferroelectric films, resulting in large remnant polarization. The CVD process provides strong interface between electrode and ferroelectric films, giving rise to minimal integration degradation and strong retention properties. After baking test at 150 °C for 100hrs, a wide sensing window of 350 mV was achieved to guarantee strong retention properties for high density FRAM products.
Keywords :
CVD coatings; annealing; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; random-access storage; 100 hr; 150 degC; 32 Mbyte; 350 mV; CVD deposition technique; advanced capacitor technology; double annealing technique; highly (111) oriented ferroelectric films; highly reliable 32Mb FRAM; large remnant polarization; minimal integration degradation; optimized annealing method; strong retention properties; Annealing; Capacitors; Degradation; Electrodes; Ferroelectric films; Nonvolatile memory; Optimization methods; Polarization; Random access memory; Testing;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314649
