Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects

Author

Ngwan, V.C. ; Zhu, Chunxiang ; Krishnamoorthy, Ahila

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2004

fDate

25-29 April 2004

Firstpage

571

Lastpage

572

Abstract

Using the carrier transport modeling in intra-level Cu interconnects, we are able to distinguish the dominant leakage mechanisms: Ohmic, Poole-Frenkel and Schottky mechanisms. In addition, the probable dominant leakage pathways: bulk-induced, barrier layer-induced or their interfaces-induced pathways are deduced to explain the leakage behavior in multilayer interconnects.

Keywords

Poole-Frenkel effect; copper; dielectric thin films; electric breakdown; integrated circuit interconnections; integrated circuit reliability; permittivity; Cu; Poole-Frenkel mechanisms; Schottky mechanisms; carrier transport modeling; interfaces-induced pathways; intra-level Cu interconnects; leakage mechanisms; leakage pathways; multilayer interconnects; ohmic leakage; Capacitors; Copper; Current measurement; Dielectrics; Electric variables measurement; Leakage current; Plasma temperature; Pollution measurement; Surface treatment; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315394

Filename

1315394

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415649