• DocumentCode
    415650
  • Title

    Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

  • Author

    Remmel, Thomas ; Ramprasad, Ramamurthy ; Roberts, Doug ; Raymond, Mark ; Martin, Matthew ; Qualls, Douglas ; Luckowski, Eric ; Braithwaite, Sharanda ; Miller, Mel ; Walls, James

  • Author_Institution
    Technol. Solutions Group, Motorola Inc., Chandler, AZ, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    573
  • Lastpage
    574
  • Abstract
    TDDB testing of MIM capacitors with various thickness plasma silicon nitride dielectric yielded high quality lifetime data, with very large Weibull betas and consistency between wafer-scale and package level tests. An excellent fit of the data to the 1/E-model was obtained indicating that the E-model lifetime extrapolation generally adopted would result in very conservative estimates of PEN MIM lifetimes.
  • Keywords
    MIM devices; capacitors; electric breakdown; reliability; MIM capacitors; Si3N4 dielectric-based metal-insulator-metal capacitors; TDDB testing; consistency; high quality lifetime data; package level tests; very large Weibull betas; wafer-scale tests; Acceleration; Dielectric constant; Dielectric substrates; Life testing; MIM capacitors; Packaging; Parasitic capacitance; Semiconductor device testing; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315395
  • Filename
    1315395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415650