Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

TDDB testing of MIM capacitors with various thickness plasma silicon nitride dielectric yielded high quality lifetime data, with very large Weibull betas and consistency between wafer-scale and package level tests. An excellent fit of the data to the 1/E-model was obtained indicating that the E-model lifetime extrapolation generally adopted would result in very conservative estimates of PEN MIM lifetimes.