Failure analysis on resistive opens with Scanning SQUID Microscopy

Author

Hsiung, S. ; Tan, K.V. ; Komrowski, A.J. ; Sullivan, D.J.D. ; Gaudestad, J. ; Orozco, A. ; Talanova, E. ; Knauss, L.A.

Author_Institution

LSI Logic Corp., Fremont, CA, USA

fYear

2004

fDate

25-29 April 2004

Firstpage

611

Lastpage

612

Abstract

Scanning Super-conducting Quantum Interference Device (SQUID) Microscopy, also known as SSM, is a current density imaging technique that has been used in failure analysis to localize package- and die-level shorts. New developments have extended this technology to localizing resistive opens, augmenting other non-destructive failure analysis tools like TDR and assisting destructive deprocessing by further pin pointing defect locations. A new method to isolate resistive opens with Scanning SQUID microscopy will be presented in this paper, and demonstrated on actual resistive open yield failures in both wire-bond and flip-chip devices.

Keywords

SQUIDs; nondestructive testing; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; Scanning SQUID Microscopy; current density imaging technique; die-level shorts; failure analysis; flip-chip devices; localize package-level shorts; nondestructive failure analysis; resistive opens; wire-bond devices; Bonding; Current distribution; Failure analysis; Integrated circuit interconnections; Large scale integration; Magnetic fields; Microscopy; Packaging; SQUIDs; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315414

Filename

1315414