DocumentCode :
415654
Title :
Gold dendrite simulation and growth kinetics
Author :
Kersey, J.L., Jr. ; Blish, Richard C., II
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
615
Lastpage :
616
Abstract :
While dendritic growth for Ag, Sn and other metals provides jeopardy for packaged integrated circuits, we observed Au dendrites inside ceramic packages. The key factors controlling growth kinetics are a combination of bias and two residual chemicals: one hygroscopic component from the die attach material, and gold plating salts. We found dendritic growth rate to be linear with plating salt concentration during laboratory simulations, but were unable to measure the current density dependence. However, the key factor was presence or absence of residual nonylphenol, tracked down to an inadequate die attach cure schedule. Laboratory simulations produced the same dendrite morphology as seen for failed units. Furthermore, we found dendritic growth would occur ONLY if all three factors were present - bias and the two chemicals.
Keywords :
ceramic packaging; dendrites; gold; microassembling; semiconductor device packaging; semiconductor device reliability; silver; tin; Ag; Au; Au dendrite simulation; Sn; current density dependence; die attach material; gold plating salts; growth kinetics; hygroscopic component; inside ceramic packages; laboratory simulations; packaged integrated circuits; Ceramics; Chemicals; Circuit simulation; Density measurement; Gold; Integrated circuit packaging; Kinetic theory; Laboratories; Microassembly; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315416
Filename :
1315416
Link To Document :
بازگشت