Title :
Thermal degradation of DRAM retention time: Characterization and improving techniques
Author :
Kim, Y.I. ; Yang, K.H. ; Lee, W.S.
Author_Institution :
DRAM Dev. Div., Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea
Abstract :
Variation of DRAM retention time and reliability problem induced by thermal stress was investigated. Most of the DRAM cells revealed 2-state retention time with thermal stress. The effects of hydrogen annealing condition and fluorine implantation on the variation of retention time and reliability are discussed.
Keywords :
DRAM chips; annealing; fluorine; integrated circuit reliability; ion implantation; passivation; thermal stresses; DRAM retention time; fluorine implantation; hydrogen annealing condition; reliability problem; thermal degradation; thermal stress; Annealing; Capacitors; Continuous wavelet transforms; Hydrogen; Manufacturing; Passivation; Random access memory; Silicon; Thermal degradation; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315442
