• DocumentCode
    415660
  • Title

    NBTI effects of pMOSFETs with different nitrogen dose implantation

  • Author

    Lee, Y.J. ; Tang, Y.C. ; Wu, M.H. ; Chao, T.S. ; Ho, P.T. ; Lai, David ; Yang, W.L. ; Huang, T.Y.

  • Author_Institution
    Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    681
  • Lastpage
    682
  • Abstract
    NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.
  • Keywords
    MOSFET; interface states; interface structure; ion implantation; nitrogen; semiconductor device breakdown; semiconductor device reliability; semiconductor doping; N dose implantation; NBTI effects; interface states; pMOSFETs; positive gate bias stressing; source/drain extension; substrate hot holes; Boron; Degradation; Hot carriers; Implants; Interface states; MOSFETs; Niobium compounds; Nitrogen; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315449
  • Filename
    1315449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=415660