Title :
Device and package level thermal modeling of GaAs Power Amplifiers
Author :
Vijayakumar, Bhuvaneshwaran ; Burton, Richard ; Guo, Yifan
Author_Institution :
Skyworks Solutions Inc.,, Irvine, CA, USA
Abstract :
In this paper an accurate finite element modeling methodology for Gallium Arsenide (GaAs) Power Amplifier (PA) modules is presented. A device level finite element model is developed to simulate the thermal performance of a single HBT device accurately. This model can be used to evaluate the effects of different device parameters on thermal performance. The effect of metallization thickness on a device is presented with excellent measurement correlation. This model is also utilized as a super element used in package level simulations. Two different power amplifier designs, one on a Metal Lead Frame (MLF) package and another on a 4×4 mm Multi Chip Module (MCM) package are used as examples to illustrate the package level simulations. The simulation results for these two packages show good agreement with the experimental measurements.
Keywords :
III-V semiconductors; finite element analysis; gallium arsenide; heterojunction bipolar transistors; multichip modules; power amplifiers; semiconductor device models; semiconductor device packaging; thermal management (packaging); GaAs; GaAs power amplifier modules; HBT device; MCM package; device parameter; finite element modeling; metal lead frame package; metallization thickness; multi chip module package; package level simulation; package level thermal modeling; power amplifier design; super element; thermal performance; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Lead; Packaging; Power amplifiers; Predictive models; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM '04. The Ninth Intersociety Conference on
Print_ISBN :
0-7803-8357-5
DOI :
10.1109/ITHERM.2004.1319187
