DocumentCode :
415975
Title :
G-helix: lithography-based wafer-level compliant chip-to-substrate interconnects
Author :
Lo, George ; Sitaraman, Suresh K.
Author_Institution :
Comput. Aided Simulation of Packaging Reliability Lab., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
1
fYear :
2004
fDate :
1-4 June 2004
Firstpage :
320
Abstract :
In this work, the fabrication and the reliability of 100 μm pitch compliant off-chip G-helix interconnects are presented. A three-mask process was used to successfully fabricate the free-standing compliant interconnect at a pitch of 100 μm. The geometry of the interconnect was optimized for mechanical and electrical performance. Also, a thermo-mechanical reliability simulation was performed. It was seen from the simulations that the G-helix interconnect assembly on an organic substrate, without the use of an underfill, could last more than 1000 thermal cycles.
Keywords :
electroplating; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; lithography; thermal stresses; 100 micron; chip-to-substrate interconnects; electroplated structure; free-standing compliant interconnect; lithography-based interconnects; microelectronic packaging; off-chip G-helix interconnects; organic substrate; thermal cycling; thermo-mechanical reliability; wafer-level pitch compliant interconnects; Circuit simulation; Electric resistance; Fabrication; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuit technology; Microelectronics; Packaging; Substrates; Thermomechanical processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2004. Proceedings. 54th
Print_ISBN :
0-7803-8365-6
Type :
conf
DOI :
10.1109/ECTC.2004.1319358
Filename :
1319358
Link To Document :
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