Title :
Coupling of simultaneous switching noise to interconnecting lines in high-speed systems
Author :
Kim, Jingook ; Rotaru, Mihai Dragos ; Chong, Kok Chin ; Park, Jongbae ; Iyer, Mahadevan K. ; Kim, Joungho
Author_Institution :
Dept of Electr. Eng. & Comput. Sci., KAIST, Daejon, South Korea
Abstract :
An analytical model of the coupling mechanism between the switching noises to signal traces has been successfully derived. The coupling mechanism was been rigorously analyzed and clarified. The analytical model was verified up to 10 GHz by comparison with measured results and simulated results using a full wave simulator (HFSS). It has also been successfully applied to applications like the current memory modules (SDRAM DDR module).
Keywords :
DRAM chips; SRAM chips; high-speed integrated circuits; integrated circuit interconnections; integrated circuit modelling; integrated circuit noise; integrated circuit packaging; 10 GHz; HFSS full wave simulator; SDRAM DDR module; analytical coupling model; coupling mechanism; high-speed systems; interconnecting lines; memory modules; signal traces; simultaneous switching noise coupling; Analytical models; Circuit noise; Coupling circuits; Electromagnetic fields; Electromagnetic interference; Integrated circuit interconnections; Noise generators; Signal analysis; Signal generators; Voltage;
Conference_Titel :
Electronic Components and Technology Conference, 2004. Proceedings. 54th
Print_ISBN :
0-7803-8365-6
DOI :
10.1109/ECTC.2004.1319395
