Title :
Lead-free flip chip interconnect reliability for DCA and FC-PBGA packages
Author :
Lin, Jong-Kai ; Jang, Jin-Wook ; Hayes, Scott ; Frear, Darrel
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
A variety of Pb-free solders and under bump metallurgies (Cu, Ni, NiP) were investigated for flip chip packaging applications. The result shows that Sn-0.7Cu exhibits the most desirable mechanical properties (shear, tensile, aging, etc.) during deformation under a variety of stress conditions and has the most favorable failure mechanism under both mechanical and thermomechanical stress testing regardless of UBM type. The eutectic Sn-0.7Cu failed through bulk solder while the eutectic Sn-37Pb, Sn-3.5Ag and Sn-3.8Ag-0.7Cu failed at the solder and UBM interface, involving their respective intermetallic compounds. Cu UBM is more favorable for better reliability than NiP UBM from both interface IMC morphology and electromigration points of view. The current carrying capability for all alloys had no failures when stressed up to 2,338 hours at 2.6×104 A/cm2 and 170°C. However, when stressed at 5.1×104 A/cm2, there is a significant migration of Pb toward the anode, creating a multiple layered Pb-rich and Sn-rich microstructure. An observation of excessive Ni migration away from the NiP UBM towards the anode after only 30 hours of current stressing at 5.1×104 A/cm2 and 150°C raised the reliability concern for solders with NiP UBM, especially for high power applications. The Sn-0.7Cu/Cu UBM and Sn0.7Cu/Ni UBM exhibit greater than 5,300 cycles of thermal fatigue characteristic life under -55°C 1+150°C and -40°C /+125°C air-to-air thermal cycling conditions, respectively.
Keywords :
ageing; ball grid arrays; deformation; flip-chip devices; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; internal stresses; plastic packaging; shear strength; soldering; tensile strength; thermal stresses; -40 to 125 C; -55 to 150 C; 170 C; 2338 hr; Cu; Cu UBM; DCA packages; FC-PBGA packages; Ni; Ni UBM; Ni migration; NiP; NiP UBM; Pb migration; Pb-free solders; Sn-Ag solder; Sn-Ag-Cu solder; Sn-Cu mechanical properties; Sn-Cu/Cu UBM; Sn-Cu/Ni UBM; SnAg; SnAgCu; SnCu; SnPb; aging; air-to-air thermal cycling conditions; current carrying capability; current stressing; deformation; eutectic Sn-Cu solder; eutectic Sn-Pb solder; failure mechanism; flip chip packaging; high power applications; interface IMC morphology; interface electromigration; intermetallic compounds; lead-free flip chip interconnect reliability; mechanical stress testing; multiple layered Pb-rich Sn-rich microstructure; reliability; shear; solder UBM interface; stress conditions; thermal fatigue characteristic life; thermomechanical stress testing; under bump metallurgies; Aging; Anodes; Environmentally friendly manufacturing techniques; Failure analysis; Flip chip; Lead; Mechanical factors; Packaging; Tensile stress; Thermal stresses;
Conference_Titel :
Electronic Components and Technology Conference, 2004. Proceedings. 54th
Print_ISBN :
0-7803-8365-6
DOI :
10.1109/ECTC.2004.1319406