A 900 MHz GSM PA in 250 nm CMOS with breakdown voltage protection and programmable conduction angle

Author

Choi, K. ; Allstot, D.J. ; Krishnamurthy, V.

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

369

Lastpage

372

Abstract

A three-stage 900 MHz GSM power amplifier implemented in 2 mm² in 250 nm CMOS outputs 2 W and 1-5 W with 30 and 43% drain and power-added efficiencies with 3.0 and 2.5 V power supply voltages, respectively. A cross-coupled self-biased cascode configuration reduces maximum voltage stress in the class-E driver stage to 1.6 V_DD without the use of additional bias voltages. A programmable conduction angle technique is also introduced and demonstrated.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; integrated circuit measurement; 1 to 5 W; 2 W; 2.5 V; 250 nm; 3.0 V; 30 percent; 43 percent; 900 MHz; CMOS GSM PA; bias voltages; breakdown voltage protection; class-E driver stage; cross-coupled self-biased cascode configuration; drain efficiencies; maximum voltage stress; power supply voltages; power-added efficiencies; programmable conduction angle; three-stage GSM power amplifier; Breakdown voltage; Circuits; Electric breakdown; Electrons; GSM; High power amplifiers; Power amplifiers; Power generation; Protection; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320624

Filename

1320624