DocumentCode
416201
Title
System level leakage reduction considering the interdependence of temperature and leakage
Author
Lei He ; Weiping Liao ; Stan, M.R.
Author_Institution
University of California, Los Angeles
fYear
2004
fDate
7-11 July 2004
Firstpage
12
Lastpage
17
Abstract
The high leakage devices in nanometer technologies as well as the low activity rates in system-on-a-chip (SOC) contribute to the growing significance of leakage power at the system level. We first present system-level leakage-power modeling and characteristics and discuss ways to reduce leakage for caches. Considering the interdependence between leakage power and temperature, we then discuss thermal runaway and dynamic power and thermal management (DPTM) to reduce power and prevent thermal violations. We show that a thermal-independent leakage model may hide actual failures of DPTM. Finally, we present voltage scaling considering DPTM for different packaging options. We show that the optimal Vdd for the hest throughput may be smaller than the largest Vdd allowed by the given packaging platform, and that advanced cooling techniques can improve throughput significantly.
Keywords
Dynamic voltage scaling; Energy management; Integrated circuit packaging; Microarchitecture; Nanoscale devices; Power system management; Power system modeling; System-on-a-chip; Temperature; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2004. Proceedings. 41st
Conference_Location
San Diego, CA, USA
ISSN
0738-100X
Print_ISBN
1-51183-828-8
Type
conf
Filename
1322429
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