• DocumentCode
    416201
  • Title

    System level leakage reduction considering the interdependence of temperature and leakage

  • Author

    Lei He ; Weiping Liao ; Stan, M.R.

  • Author_Institution
    University of California, Los Angeles
  • fYear
    2004
  • fDate
    7-11 July 2004
  • Firstpage
    12
  • Lastpage
    17
  • Abstract
    The high leakage devices in nanometer technologies as well as the low activity rates in system-on-a-chip (SOC) contribute to the growing significance of leakage power at the system level. We first present system-level leakage-power modeling and characteristics and discuss ways to reduce leakage for caches. Considering the interdependence between leakage power and temperature, we then discuss thermal runaway and dynamic power and thermal management (DPTM) to reduce power and prevent thermal violations. We show that a thermal-independent leakage model may hide actual failures of DPTM. Finally, we present voltage scaling considering DPTM for different packaging options. We show that the optimal Vdd for the hest throughput may be smaller than the largest Vdd allowed by the given packaging platform, and that advanced cooling techniques can improve throughput significantly.
  • Keywords
    Dynamic voltage scaling; Energy management; Integrated circuit packaging; Microarchitecture; Nanoscale devices; Power system management; Power system modeling; System-on-a-chip; Temperature; Thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2004. Proceedings. 41st
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0738-100X
  • Print_ISBN
    1-51183-828-8
  • Type

    conf

  • Filename
    1322429