Title :
A 60 GHz Low Phase Variation Variable Gain Amplifier in 65 nm CMOS
Author :
Di-Sheng Siao ; Jui-Chih Kao ; Huei Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This letter presents a 57-66 GHz low phase variation variable gain amplifier (VGA) in standard RF 65 nm CMOS process with a chip area of 0.25 mm2. The phase compensation is achieved by using the different trends of phase between current-steering and splitting-cascade topologies. This VGA achieves the phase variation lower than 7° with 33 dB gain control range (GCR). The 3 dB bandwidth is from 50 to 70 GHz with 21 dB peak gain.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; gain control; millimetre wave amplifiers; GCR; VGA; current-steering topology; frequency 50 GHz to 70 GHz; gain 33 dB; gain control range; low phase variation; phase compensation; size 65 nm; splitting-cascade topology; standard RF CMOS process; variable gain amplifier; CMOS integrated circuits; Gain; Gain control; Gain measurement; Phase measurement; Topology; Transmission line measurements; Broadband amplifiers; CMOS amplifiers; millimeter-wave; variable gain amplifiers (VGAs);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2316253