Title :
Electrical properties of PIP anti-fuse for the logic circuit configuration
Author :
Kim, P.J. ; Ku, D.S. ; Jeong, L.S. ; Yun, J.H. ; Choi, S.Y. ; Kim, J.B.
Author_Institution :
Sung-Hwa Coll., Gangjin, South Korea
Abstract :
Anti-fuse is used as the program switch element that selectively connects the logic blocks and the wire channels in FPGAs. A novel PIP anti-fuse structure consists of poly-Si/ONO/poly-Si layers. The anti-fuse showed a low on-state resistance of 140/spl sim/200 /spl Omega/. For the anti-fuse, the rupture voltage was about 7 V. The rupture time was very short time of 100/spl sim/500 ms.
Keywords :
PROM; electronic engineering computing; field programmable gate arrays; logic circuits; silicon; 100 to 500 ms; 140 to 200 ohm; 7 V; FPGA; antifuse; electrical properties; logic circuit configuration; program switch element;
Conference_Titel :
SICE 2003 Annual Conference
Conference_Location :
Fukui, Japan
Print_ISBN :
0-7803-8352-4
