DocumentCode :
41794
Title :
2015 Special Issue of IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects Editor Comments
Author :
Fleetwood, Dan ; Brown, Dennis ; Girard, Sylvain ; Gouker, Pascale ; Gerardin, Simone ; Quinn, Heather ; Barnaby, Hugh
Author_Institution :
Vanderbilt University,
Volume :
62
Issue :
4
fYear :
2015
fDate :
Aug. 2015
Firstpage :
1439
Lastpage :
1439
Abstract :
The papers in this special issue review and/or extend the state of the art in modeling and simulation of radiation effects on microelectronics. Papers in the issue cover a broad range of topics, including single event effects, total ionizing dose effects, displacement damage effects, defects in microelectronic devices, and electromagnetic pulse effects.
Keywords :
Analytical models; Microelectronics; Nuclear power generation; Object recognition; Predictive models; Radiation effects; Special issues and sections;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2462231
Filename :
7203240
Link To Document :
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