• DocumentCode
    417960
  • Title

    An 89dB low-power CMOS ΣΔ modulator for Bluetooth application

  • Author

    Huang, Haibin ; El-Masry, Ezz I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
  • Volume
    1
  • fYear
    2004
  • fDate
    23-26 May 2004
  • Abstract
    This paper presents a low-power CMOS ΣΔ modulator for a single-chip Bluetooth transceiver. It implements a low-power, fast-settling operational amplifier and can achieve 75 dB SNDR and 81 dB dynamic range over 1 MHz bandwidth. The design was fabricated using 0.18 μm CMOS process. The chip size is 0.63mm2 and the power dissipation is only 64 mW.
  • Keywords
    Bluetooth; CMOS integrated circuits; low-power electronics; operational amplifiers; sigma-delta modulation; transceivers; ΣΔ modulator; 0.18 microns; 1 MHz; 64 mW; fast-settling operational amplifier; low-power CMOS; low-power operational amplifier; single-chip Bluetooth transceiver; Bluetooth; Circuit noise; Computational modeling; Control systems; Delta modulation; Mathematical model; Noise figure; Operational amplifiers; Semiconductor device modeling; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
  • Print_ISBN
    0-7803-8251-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.2004.1328166
  • Filename
    1328166
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=417960