DocumentCode :
417989
Title :
High-voltage-tolerant power supply in a low-voltage CMOS technology
Author :
Potanin, Vladislav Y. ; Potanina, Elena E.
Author_Institution :
National Semicond. Corp., Santa Clara, CA, USA
Volume :
1
fYear :
2004
fDate :
23-26 May 2004
Abstract :
A power supply circuit that is tolerant of supply voltages up to twice the process limit for individual CMOS transistors is presented. The circuit demonstrates an economical and reliable way to accommodate high-voltage power sources in highly integrated power management ICs. A combination of a cascode topology and a bias voltage tracking technique ensures that each individual transistor remains within its operating limits. The described approach and circuits were implemented in a power management IC for cellular phones using a 5 V CMOS process. The implemented power supply is tolerant of input voltages up to 12 V and passes operational life and reliability tests. Simulation and measurement data for steady-state and power-up transient conditions confirms that the opening conditions of the internal components are safe for all possible combinations of external supplies and loads.
Keywords :
CMOS integrated circuits; cellular radio; integrated circuit design; low-power electronics; network topology; power supply circuits; transistors; voltage control; 5 V; CMOS transistor; bias voltage tracking; cascode topology; cellular phone; high-voltage power source; high-voltage-tolerant power supply; low-voltage CMOS technology; measurement data; operational life test; power management IC; power source accommodation; power supply circuit; power-up transient condition; reliability test; simulation data; steady-state condition; supply voltage tolerance; CMOS integrated circuits; CMOS process; CMOS technology; Circuit topology; Energy management; Integrated circuit reliability; Integrated circuit technology; Power generation economics; Power supplies; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1328214
Filename :
1328214
Link To Document :
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