Title :
VLSI potentiostat for amperometric measurements for electrolytic reactions
Author :
Narula, Harpreet S. ; Harris, John G.
Author_Institution :
Computational Neuro-Eng. Lab., Florida Univ., Gainesville, FL, USA
Abstract :
This paper describes a CMOS integrated potentiostatic control circuit. The design maintains a constant bias potential between the reference and working electrodes for an amperometric chemical sensor. A technique of converting input currents into time for amperometric measurements is proposed. Redox currents ranging from a 1 pA to 200 nA can be measured with a maximum nonlinearity of ± 0.1% over this range. Analog inputs are processed and digital outputs are generated without requiring a power-hungry A/D converter. A prototype chip has been fabricated in the 0.5 μm AMI CMOS process. Experimental results are reported showing the performance of the circuit as a chemical sensor.
Keywords :
CMOS integrated circuits; VLSI; amperometric sensors; chemical sensors; electric current measurement; electric potential; integrated circuit design; 0.5 micron; 1000 to 200 nA; AMI CMOS process; CMOS integrated circuit; VLSI potentiostat; amperometric chemical sensor; amperometric measurement; analog input processing; circuit performance; constant bias potential; current to time conversion; digital output generation; electrolytic reactions; potentiostatic control circuit; power-hungry A-D converter; prototype chip fabrication; redox current measurement; reference electrodes; working electrodes; Analog-digital conversion; Chemical sensors; Current measurement; Electrodes; Integrated circuit measurements; Power generation; Prototypes; Semiconductor device measurement; Time measurement; Very large scale integration;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328230