A novel delta-sigma modulator using resonant-tunneling quantizers

Author

Chibashi, Masaru ; Eguchi, Keisuke ; Waho, Takao

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

A ΣΔ modulator based on ultrahigh-speed compound semiconductor technology is proposed. Resonant tunneling diodes (RTDs) are employed for a multi-GHz quasi-differential quantizer. High electron mobility transistors, or HEMTs, with a unity-current-gain cutoff frequency of 150 GHz are also used to obtain integrators. Our transistor-level circuit simulation for a 2nd-order continuous-time ΣΔ modulator exhibits clear noise-shaping characteristics at a sampling frequency of 4 GHz. This proves high potential of the present RTD-based circuit.

Keywords

circuit simulation; delta-sigma modulation; high electron mobility transistors; high-speed integrated circuits; integrated circuit design; modulators; resonant tunnelling diodes; 150 GHz; 4 GHz; RTD-based circuit; continuous-time ΣΔ modulator; delta-sigma modulator; high electron mobility transistors; integrators; multiGHz quantizer; noise-shaping characteristics; quasidifferential quantizer; resonant tunneling diodes; resonant-tunneling quantizer; transistor-level circuit simulation; ultrahigh-speed semiconductor technology; unity-current-gain cutoff frequency; Circuits; Delta modulation; Electron emission; HEMTs; MODFETs; Resonance; Resonant tunneling devices; Semiconductor diodes; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328249

Filename

1328249