Design of a 1.8 V 4.9 ∼ 5.9 GHz CMOS broadband low noise amplifier with 0.28 dB gain flatness using AMER inductor loads

Author

Lu, Yin-Lung ; Wu, Yi-Cheng ; Yu, Kyung-Wan ; Chen, Wei-Li ; Chang, M.F.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

1

fYear

2004

fDate

23-26 May 2004

Abstract

A 4.9 ∼ 5.9 GHz broadband LNA, suitable for IEEE 802.11a, HIPERLAN and IEEE 802.11j, is designed and simulated. Using active magnetic energy recovery (AMER) inductors to boost gain, this broadband AMER LNA exhibits high gain (21.2 dB) with good gain flatness (0.28 dB) within the 4.9 ∼ 5.9 GHz frequency range. In comparison to the conventional 3-stage LNA, this broadband AMER LNA achieve higher gain, and better gain flatness with the cost of consuming slightly extra current, 0.2 mA, in two AMER inductors. The simulated noise figure lies within 2.2 dB and 2.7 dB in the frequency range and the IIP3 is +8 dBm. The broadband AMER LNA is designed to meet the requirements for integration of all IEEE 802.11a, HIPERLAN and IEEE 802.11j.

Keywords

CMOS integrated circuits; IEEE standards; circuit simulation; inductors; integrated circuit design; wideband amplifiers; 0.2 mA; 0.28 dB; 1.8 V; 21.2 dB; 3-stage LNA; 4.9 to 5.9 GHz; AMER inductor loads; CMOS low noise amplifier; HIPERLAN; IEEE 802.11a; IEEE 802.11j; IIP3; active magnetic energy recovery; amplifier simulation; broadband AMER LNA; broadband amplifier; extra current consumption; gain boosting; gain flatness; higher gain achievement; low noise amplifier design; simulated noise figure; standards integration; Broadband amplifiers; CMOS technology; Gain; High-speed electronics; Inductors; Low-noise amplifiers; Narrowband; Noise figure; Noise measurement; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328266

Filename

1328266