Title :
Four-channel SiGe transimpedance amplifier array for parallel optical interconnects
Author_Institution :
Dept. of Inf. Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea
Abstract :
A four-channel transimpedance amplifier array is realized in a 0.8 μm Si/SiGe HBT technology for parallel optical interconnect applications. Measured results demonstrate that each channel provides a bandwidth of 3.9 GHz, a transimpedance gain of 62 dBΩ, and an average noise current spectral density of 7.5 pA/√Hz. The array achieves less than -25 dB crosstalk between adjacent channels and dissipates 40 mW in total from ±2.5 V supply.
Keywords :
Ge-Si alloys; bipolar digital integrated circuits; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; integrated optoelectronics; optical arrays; optical crosstalk; optical interconnections; optical noise; optical receivers; photodiodes; semiconductor optical amplifiers; silicon; 0.8 micron; 2.5 V; 3.9 GHz; 40 mW; Si-GeSi; Si-SiGe HBT technology; adjacent channels; crosstalk; four-channel SiGe transimpedance amplifier array; noise current; parallel optical interconnects; spectral density; transimpedance gain; Crosstalk; Current measurement; Density measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optical arrays; Optical interconnections; Semiconductor optical amplifiers; Silicon germanium;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1328978
