Title :
A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process
Author :
Ferreira, Luis H. C. ; Sonkusale, Sameer R.
Author_Institution :
Syst. Eng. & Inf. Technol. Inst., Fed. Univ. of Itajuba, Itajuba, Brazil
Abstract :
This paper presents a 60-dB gain bulk-driven Miller OTA operating at 0.25-V power supply in the 130-nm digital CMOS process. The amplifier operates in the weak-inversion region with input bulk-driven differential pair sporting positive feedback source degeneration for transconductance enhancement. In addition, the distributed layout configuration is used for all the transistors to mitigate the effect of halo implants for higher output impedance. Combining these two approaches, we experimentally demonstrate a high gain of over 60-dB with just 18-nW power consumption from 0.25-V power supply. The use of enhanced bulk-driven differential pair and distributed layout can help overcome some of the constraints imposed by nanometer CMOS process for high performance analog circuits in weak inversion region.
Keywords :
CMOS analogue integrated circuits; CMOS digital integrated circuits; circuit feedback; differential amplifiers; integrated circuit layout; operational amplifiers; bulk-driven Miller OTA; digital CMOS process; distributed layout configuration; gain 60 dB; halo implant effect mitigation; high performance analog circuits; higher output impedance; input bulk-driven differential pair; nanometer CMOS process; positive feedback source degeneration; power 18 mW; power consumption; size 130 nm; transconductance enhancement; transistors; voltage 0.25 V; weak-inversion region; Impedance; Implants; Layout; Power supplies; Threshold voltage; Transconductance; Transistors; Bulk-driven Miller OTA; halo-implanted transistors; low-power applications; low-voltage; weak inversion;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2013.2289413