The frequency-dependent average power handling capability of metal-insulator-semiconductor (MIS) microstrip interconnects

The average power handling capabilities (APHC) of various metal-insulator-semiconductor (MIS) microstrip configurations are studied and compared. The methodology is based on the accurately extracted conductive and substrate attenuation constants, and proposed thermal models to predict the rise in temperature, where the silicon substrate is characterized by an effective thickness determined by the complex image method. Numerical results are given to show the effects of strip thickness and width, silicon conductivity, isolation thickness, etc., on the APHC of different MIS microstrip interconnects. Approaches to enhance the APHC effectively are also indicated.