A Fully Integrated Triple-Band CMOS Class-E Power Amplifier With a Power Cell Resizing Technique and a Multi-Tap Transformer

Author

Woo-Young Kim ; Hyuk Su Son ; Joon Hyung Kim ; Joo Young Jang ; Inn Yeal Oh ; Chul Soon Park

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

23

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

659

Lastpage

661

Abstract

This letter presents a fully integrated triple-band CMOS class-E power amplifier (PA) for the 0.8/1.9/2.4 GHz frequencies. The operating frequency band is tuned by a power cell resizing technique and by changing the supply bias position with a multi-tap transformer for the required capacitance and inductance values for optimum class-E operation. The PA achieves output powers of 28/29.6/26.5 dBm and power-added efficiency of 40/45/37% at each frequency band. The PA is implemented in a 0.18 μm CMOS process without multiple transformers or input/output matching networks. The total chip size is 1.5 × 1.5 mm².

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; transformers; PA; capacitance value; efficiency 37 percent; efficiency 40 percent; efficiency 45 percent; frequency 0.8 GHz; frequency 1.9 GHz; frequency 2.4 GHz; fully integrated triple-band CMOS class-E power amplifier; inductance value; input-output matching network; multitap transformer; power cell resizing technique; power-added efficiency; size 0.18 mum; supply bias position; CMOS integrated circuits; CMOS technology; Capacitance; Impedance matching; RLC circuits; System-on-chip; Wireless communication; CMOS; Class-E; multi-band; power amplifier (PA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2283874

Filename

6623157