Title :
Modeling and Simulation of LDO Voltage Regulator Susceptibility to Conducted EMI
Author :
Jianfei Wu ; Boyer, A. ; Jiancheng Li ; Vrignon, Bertrand ; Ben Dhia, S. ; Sicard, Etienne ; Rongjun Shen
Author_Institution :
Sch. of Electron. Sci. & Eng., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
This paper presents a methodology dedicated to modeling and simulation of low-dropout (LDO) voltage regulator susceptibility to conducted electromagnetic interference (EMI). A test chip with a simple LDO structure was designed for EMC test and analysis. A transistor-level model, validated by functional tests, Z-parameter characterization and direct power injection (DPI) measurements, is used to predict the immunity of the LDO regulator. Different levels of model extraction reveal the weight contributions of subcircuits and parasitic elements on immunity issues. The DPI measurement results show a good fit with model prediction up to 1 GHz.
Keywords :
electromagnetic compatibility; electromagnetic interference; immunity testing; voltage regulators; DPI measurements; EMC analysis; EMC test; EMI; LDO regulator immunity; LDO voltage regulator susceptibility; Z-parameter characterization; conducted electromagnetic interference; direct power injection measurements; functional tests; low-dropout voltage regulator susceptibility; model extraction; parasitic elements; subcircuits; test chip; transistor-level model; Capacitors; Electromagnetic interference; Immunity testing; Integrated circuit modeling; Photonic band gap; Regulators; Semiconductor device measurement; Direct power injection (DPI); Z-parameter; electromagnetic interference (EMI); interference propagation; low-dropout (LDO) voltage regulator; parasitic elements; susceptibility;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.2013.2294951
