Title :
Low noise, and high gain wideband amplifier using SiGe HBT technology
Author :
Chan, Richard ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence´s Spectre´s simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier´s measured and simulated results.
Keywords :
distributed amplifiers; heterojunction bipolar transistors; integrated circuit design; low-power electronics; silicon compounds; system-on-chip; wideband amplifiers; 15 dB; 22 GHz; 5 dB; 72 mW; Cadence Spectre simulation; HBT technology; SiGe; amplifier chip; distributed amplifier; layout parasitics; low noise amplifier; low power amplifier; output third-order intermodulation product; receiver system-on-a-chip; wideband amplifier; Bandwidth; Broadband amplifiers; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Operational amplifiers; Power amplifiers; Silicon germanium; System-on-a-chip;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335786
