A symmetric and thermally de-embedded nonlinear FET model for wireless and microwave applications

Author

Wood, John ; Root, David E.

Author_Institution

Microwave Technol. Center, Agilent Technol. Inc., Santa Rosa, CA, USA

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

35

Abstract

This paper describes the development of a new large-signal nonlinear FET model. The raison d´etre for this model is the design of modern wireless RFICs which places new demands on the predictions of linearity and efficiency of the circuit. The model is a hybrid, comprising an advanced development of the Chalmers University (a.k.a. ´Angelov´) (Angelov et al., 1992) drain current model to include dynamic electro-thermal behavior, and a table-based HPFET (Root et al., 1991) 2-dimensional gate current and charge model. Both components are enhanced to include symmetry, even though the model is extracted from measurements made only on the half-space V_ds ≥ 0. The model has been validated in class B amplifier, power amplifier and mixer RFIC applications.

Keywords

field effect transistors; mobile communication; power amplifiers; radiofrequency integrated circuits; semiconductor device models; 2D gate current model; Chalmers University; charge model; class B amplifier; drain current model; dynamic electrothermal behavior; large-signal FET model; microwave applications; mixer RFIC applications; modern wireless RFIC; power amplifier; symmetric nonlinear FET model; table-based HPFET; thermally deembedded nonlinear FET model; wireless applications; Microwave FETs; Microwave circuits; Microwave technology; Power amplifiers; Power generation; Predictive models; Radio frequency; Radiofrequency amplifiers; Switches; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335791

Filename

1335791