Title :
Cryogenic 2-4 GHz ultra low noise amplifier
Author :
Mellberg, Anders ; Wadefalk, Niklas ; Angelov, Iltcho ; Choumas, E. ; Kollberg, Erik ; Rorsman, Niklas ; Starski, Piotr ; Stenarson, Jorgen ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
This paper describes two-stage InP-based cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. For a band of 2-4 GHz at 15 K the measured gain is 30.0±2 dB and a noise temperature below 5 K. The total DC power consumption of the amplifier is 6.8 mW.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; microwave amplifiers; semiconductor device models; thermal noise; 1.5 to 4.5 GHz; 15 K; 2 to 4 GHz; 6.8 mW; DC power consumption; HEMT; InP; cryogenic broadband amplifier; cryogenic low noise amplifier; noise temperature; Broadband amplifiers; Cryogenics; Energy consumption; Frequency; Gain measurement; Low-noise amplifiers; Noise measurement; Power amplifiers; Power measurement; Temperature;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335830
