SiGe-based circuits for sensor applications beyond 100 GHz

Author

Steinhauer, M. ; Irion, H. ; Schott, M. ; Thiel, M. ; Ruoss, H.-O. ; Heinrich, W.

Author_Institution

Dept. FV/FLO, Robert Bosch GmbH, Gerlingen, Germany

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

223

Abstract

Key components of sensor front-ends have been realized for the frequency range beyond 100 GHz in a SiGe bipolar technology. The circuits presented include 110 GHz push-push and fundamental VCOs, both with up to 0 dBm ouput power, as well as fixed-frequency oscillators at 121 and 124 GHz. Furthermore, 122 GHz down-conversion mixers are demonstrated.

Keywords

MMIC; heterojunction bipolar transistors; integrated circuit design; millimetre wave circuits; mixers (circuits); silicon compounds; voltage-controlled oscillators; 110 GHz; 121 GHz; 122 GHz; 124 GHz; MMIC; SiGe; bipolar technology; down-conversion mixers; fixed-frequency oscillators; fundamental VCO; heterojunction bipolar transistors; millimeter-wave circuits; push-push VCO; sensor applications; sensor front-end components; voltage controlled oscillators; Circuits; Frequency; Germanium silicon alloys; Pollution measurement; Power generation; Semiconductor diodes; Sensor phenomena and characterization; Silicon germanium; Vibration measurement; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335851

Filename

1335851