• DocumentCode
    42016
  • Title

    Neutrons-Induced IGBT Failure: Effects of the Number of Tested Devices on the Cross Section Calculation

  • Author

    Touboul, A.D. ; Foro, L.L. ; Wrobel, F. ; Guetarni, Karima ; Boch, J. ; Saigne, F.

  • Author_Institution
    Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
  • Volume
    60
  • Issue
    4
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    2392
  • Lastpage
    2396
  • Abstract
    Despite the long-term experience of space in testing and qualifying devices, an adaptation of existing guidelines is needed for atmospheric mass applications, especially to take into account the variability of power-devices failure cross-section.
  • Keywords
    failure analysis; insulated gate bipolar transistors; neutron effects; power bipolar transistors; semiconductor device testing; atmospheric mass application; insulated gate bipolar transistors; neutrons-induced IGBT failure; power-devices failure cross-section; Aerospace electronics; Insulated gate bipolar transistors; Neutrons; Radiation effects; Reliability; Sensitivity; Testing; Atmospheric neutrons; IGBT; SEB; SEL; failure; ground level;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2248747
  • Filename
    6510517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=42016